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The Use Of Semiconductor Common Gas
Dec 01, 2017

1, silane (SiH4): toxic. Silane in the semiconductor industry, mainly for the production of high purity polysilicon production by vapor deposition of SiO2 films and silicon nitride thin film, polycrystalline silicon isolation layer, polysilicon ohmic contact layer and the heterogeneous or homogeneous epitaxial growth of silicon raw materials, and the ion source and the laser medium, but also can be used for the production of solar cells, optical fiber and optical sensors etc..

2, germanium (GeH4): highly toxic. Metal germanium is a good semiconductor material. Germanium is mainly used for chemical vapor deposition in the electronics industry, forming various silicon germanium alloys for the manufacture of electronic components. 3, phosphane (PH3): highly toxic. It is mainly used for the doping of silane epitaxy, and the source of phosphorus diffusion. It is also applied to polycrystalline silicon chemical vapor deposition, epitaxial GaP materials, ion implantation process, MOCVD process of compound semiconductor, and phosphorus silicon glass (PSG) passivation film preparation process.

4, arsenane (AsH3): highly toxic. It is mainly used for the N type dopant in the epitaxial and ion implantation process.

5, antimony hydride (SbH3): highly toxic. It is used as a gas phase dopant for the manufacture of N silicon semiconductors.

6, borane (B2H6): a poisonous gas that asphyxiate and smell. Borane is a gaseous impurity source, ion implantation and boron doped oxidation diffusions, which have also been used as fuel for rockets and missiles as high-energy fuels.

7, three boron fluoride (BF3): toxic, extremely strong irritation. It is mainly used as P type dopant, ion implantation source and plasma etching gas.

8, three fluorinated nitrogen (NF3): strong toxicity. It is mainly used for the cleaning of chemical vapor deposition (CVD) device. Three, nitrogen fluoride can be used alone or combined with other gases as an etching gas for plasma technology. For example, NF3, NF3/Ar and NF3/He are used for etching MoSi2 of silicon compounds. NF3/CCl4 and NF3/HCl are used for etching MoSi2 as well as NbSi2 etching.

9, three phosphorus fluoride (PF3): very toxic. As the source of gaseous phosphorus ion implantation.

10, four silicon fluoride (SiF4): to meet the water to produce highly corrosive fluorosilic acid. It is mainly used for plasma etching of silicon nitride (Si3N4) and tantalum silicide (TaSi2), light emitting diode type P doping, ion implantation, epitaxial deposition and diffusion of silicon source and high purity quartz glass raw material for optical fiber.

11, five phosphorus fluoride (PF5): toxic hydrogen fluoride smoke is produced in moist air. It is used as the source of gaseous phosphorus ion implantation.

12, four fluorocarbon (CF4): as a common working gas in the plasma etching process, it is a plasma etching agent for silicon dioxide and silicon nitride.

13, six fluoroethane (C2H6): in the plasma process, the dry etching gas of silica and phosphorous silicon glass.

14, perfluoropropane (C3F8): in the plasma etching process, the etching gas is used as silicon dioxide film, phosphorus silicon glass film.

Mixed gases used in semiconductor industry

1, epitaxial (growth) mixture: in the semiconductor industry, the chemical vapor deposition method is chosen on the carefully selected substrate, and the gas used to grow one or more layers of material is called the epitaxial gas. The common silicon epitaxial gases are two chlorine two hydrogen silicon (DCS), four silicon chloride (SiCl4) and silane. It is mainly used for epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, and the amorphous silicon film deposition of solar cells and other photoreceptors. Epitaxy is a process of deposition and growth of a single crystal material on the surface of a substrate.

2, chemical vapor deposition (CVD) uses mixture gas: CVD is a method of using volatile compounds to form certain compounds and compounds through gas-phase chemical reaction, that is, a gas forming chemical reaction method. The chemical vapor deposition (CVD) gas is also different according to the type of film formation.

3, doped mixed gas: in the manufacture of semiconductor devices and integrated circuits, imported electronic gas and micro signal bluceren are consulted. Some impurities are added into the semiconductor material to make the material have the type of electrical conductivity and a certain resistivity to make resistance, PN junction, buried layer and so on. The gas used in the doping process is called the doping gas. It mainly includes arsine, phosphane, three phosphorus fluoride, five phosphorus fluoride, three arsenic fluoride, five arsenic fluoride, three boron fluoride, borane and so on. Usually, the doping source and carrier gas (such as argon and nitrogen) are mixed in the source cabinet. After mixing, the air is continuously injected into the diffusion furnace and surrounds the wafer, and the dopant is deposited on the wafer surface, and then react with silicon to form the doped metal and migrate into the silicon.

4, etching mixed gas: etching is etching the surface without photoresist on the substrate, such as metal film, silicon oxide film and so on, so that the area covered by photoresist can be saved, so that we can get the desired imaging pattern on the substrate surface. The etching methods include wet chemical etching and dry chemical etching. The gases used in dry chemical etching are called etched gases. Etched gases are usually fluoride gases (halides), such as four fluorocarbon, three fluorinated nitrogen, three fluoro methane, six fluoroethane, and perfluoropropane.